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Samsung develops 4gb DRAM via Stacking Method

Samsung Electronics has announced it has developed an all-DRAM stacked memory package using "through silicon via" (TSV) technology.

The new wafer-level-processed stacked package (WSP) consists of four 512Mb DDR2 chips that offer a combined 2Gb of high density memory. Using the TSV-processed 2Gb DRAMs, Samsung can create a 4GB DIMM.

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digitimes.com
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kewlkat0073744d ago

since I'm not sure when and where they are going to use this, but that deal they just made with Microsoft, will reap rewards in the future I'm sure.