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TSMC on track to produce 28nm chips in early 2010

Taiwan Semiconductor Manufacturing Company on Thursday revealed details about its 28nm process technology that extends usage of Silicon Oxynitride (SiON)/poly with a dual/triple gate oxide process and is not based on high-k metal gate (HKMG) dielectrics like process technologies from other companies. TSMC also emphasized that it would start production of chips using 28nm tech in early 2010.

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